ip semiconductor co., ltd. ipt1206 - xxf high current density due to double mesa technology; sipos and glass passivation. ipt1206 - xx series are suitable for general purpose ac switching. they can be used as an on/off function in application such as static relays, heating regulation, induction motor stating circuits or for phase control operation light dimmers, motor speed controllers. the ipt1206 - xxf(insulated version) series are isolated internally, they provided a 2500v rms isolation voltage from all three terminals to external heatsink.. symbol value unit i t(rms) 12 a v drm / v rrm 600 v v tm 1.55 v main features parameter symbol value unit storage junction temperature range operating junction temperature range tstg tj - 40 to +150 - 40 to +125 drm v rrm 600 600 v non repetitive peak off - state voltage tj = 25 dsm v rsm 700 700 v rms on C state current tc = 79 t(rms) 12 a non repetitive surge peak on C state current f = 60hz t = 16.7ms (full cycle, tj = 25 tsm 126 120 a i 2t value for fusing t p = 10ms i 2t 78 a 2s critical rate of rise of on - state current i g = 2xi gt , t r 100ns, f = 120hz, tj = 125 di / dt 50 a/us peak gate current t p = 20us, tj = 125 gm 4 a average gate power dissipation tj = 125 g(av) 1 w absolute maximum ratings 1 4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com
ipt1206 - xxf electrical characteristics (tj = 25 2 static characteristics symbol test conditions value(max) unit v tm i tm = 17a, t p = 380us tj = 125 drm v d = v drm tj = 125 rrm v r = v rrm tj = 125 thermal resistances symbol parameter value unit r th (j C c) junction to case(ac) 3.3 symbol test condition quadrant ipt1206 - xxf unit te se ce be i gt v d = 12v r l = 30 ? i C ii C iii max 5 10 35 50 ma v gt i C ii C iii max 1.3 v v gd v d =v drm, r l =3.3k ?, tj = 125 C ii C iii min 0.2 v i l i g = 1.2 i gt i C iii max 10 25 50 70 ma ii 15 30 60 80 i h i t = 100ma max 10 15 35 50 ma dv/dt v d = 67% v drm gate open tj = 125
4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 11 - 237 - 2837, fax : +82 - 2 - 6280 - 6382, shorn@ipsemiconductor.com package mechanical data to - 220f 3 ref dimensions millimeters inches min typ max min typ max a 4.4 4.8 0.173 0.189 b 0.74 0.8 0.83 0.029 0.031 0.033 c 0.5 0.75 0.020 0.030 c2 2.4 2.7 0.094 0.106 c3 2.6 3 0.102 0.118 d 8.8 9.3 0.346 0.367 e 9.7 10.3 0.382 0.406 f 6.4 6.8 0.252 0.268 g 5 5.2 0.197 0.205 h 28.0 29.8 11.0 11.7 l1 3.63 0.143 l2 1.14 1.7 0.044 0.067 l3 3.3 0.130 v1 40 o 40 o ipt1206 - xxf
ipt1206 - xxf 4 4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com
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